DEPOSITION OF CDO THIN FILMS BY DIP COATING TECHNIQUE AND THE EFFECT OF CONCENTRATION ON GAS SENSOR APPLICATIONS
DOI:
https://doi.org/10.52292/j.laar.2024.2862Keywords:
metal oxide, semiconductor, gas control system, butane, sol-gelAbstract
In this study, CdO thin films were deposited on glass substrates by dip coating technique using sol-gel solutions prepared at different concentrations. Dip coating process parameters was determined as dipping time 60 sec, dipping layer number 10, drying at 150 °C for 150 seconds between operations and the last process annealing temperature 500 °C. The effects of the concentration on the structural, surface, optical and electrical properties of the produced thin films were investigated. The suitability of the produced semiconductor glasses for use as a gas sensor has been tested with the gas cabin that can be placed on the sensor and the created gas sensor control system. The sensitivity of CdO gas sensors to butane gas was measured. The effect of concentration on CdO gas sensors in gasless and butane gas conditions was investigated. As a result of the tests, it was determined that the semiconductor thin films produced at a concentration of 0.1 M showed the optimum gas sensor feature.
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